1. Product Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms prepared in a tetrahedral lattice, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing extraordinary atomic bond toughness.
The Si– C bond, with a bond energy of about 318 kJ/mol, is amongst the strongest in architectural porcelains, conferring exceptional thermal security, solidity, and resistance to chemical assault.
This durable covalent network results in a material with a melting point going beyond 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains readily available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC maintains mechanical toughness and creep resistance at temperature levels over 1400 ° C, where several steels and conventional porcelains start to soften or break down.
Its low coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) enables rapid thermal cycling without catastrophic splitting, an essential characteristic for crucible efficiency.
These intrinsic residential properties come from the balanced electronegativity and comparable atomic sizes of silicon and carbon, which promote a highly steady and densely packed crystal framework.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are commonly fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a crucial duty in durability and thermal shock resistance.
Sintered SiC crucibles are generated through solid-state or liquid-phase sintering at temperature levels over 2000 ° C, commonly with boron or carbon ingredients to improve densification and grain boundary communication.
This process yields a totally dense, fine-grained structure with minimal porosity (
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